Transparent conductive ZnO film preparation by alternating sputtering of ZnO:Al and Zn or Al targets

被引：60
|
作者：
Tominaga, K [1 ]
Umezu, N [1 ]
Mori, I [1 ]
Ushiro, T [1 ]
Moriga, T [1 ]
Nakabayashi, I [1 ]
机构：
[1] Univ Tokushima, Tokushima 770, Japan
来源：
THIN SOLID FILMS | 1998年 / 334卷 / 1-2期
关键词：
transparent conductive film; ZnO; ZnO : Al; sputtering;
D O I：
10.1016/S0040-6090(98)01112-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Multilayered ZnO:Al and ZnO:O-v film was prepared by alternately sputtering ZnO:Al(2% wt.) and Zn targets. The films obtained were optically transparent and had lower resistivity than those prepared by ZnO:Al sputtering. Deposition from the Zn target gave a ZnO film containing native donors (a ZnO:O-v film). The carrier concentration increased in the ZnO:Al/ZnO:O-v multilayered film. Our results cannot be explained by the redistribution of the carrier between ZnO:Al and ZnO:O-v. This result indicates an improvement in the doping efficiency. Multilayered films of ZnO:Al and Al oxide compounds were also prepared. In this case, with increasing thickness of the Al oxide film, a decrease was observed in the carrier mobility, due to the scattering at the interface. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：35 / 39
页数：5
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