Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures

被引：0

作者：

Anwar, Saeed ^{[1
]}

Wang, Zhiqiang ^{[2
]}

Chinthavali, Madhu ^{[2
]}

机构：

[1] Univ Tennessee, Knoxville, TN 37996 USA

[2] Oak Ridge Natl Lab, Power Elect & Elect Machinery Grp, Knoxville, TN 37932 USA

来源：

2018 IEEE TRANSPORTATION AND ELECTRIFICATION CONFERENCE AND EXPO (ITEC) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the static and dynamic characteristics of discrete 650 V and 1200 V trench TO 247 SiC MOSFET is evaluated and compared with a similar current rating 1200 V planar gate discrete TO 247 SiC MOSFET. The new trench MOSFET has promising application for vehicle charging and auxiliary power supply application due to the lower on-state resistance and lower capacitance. Static characteristics for these devices are evaluated using a curve tracer for different device junction temperature A common double pulse test (DPT) platform is developed to evaluate the switching loss at different device junction temperature ranging from 25 degrees C to 175 degrees C. The experimental setup and results are presented for different load currents and temperature.

引用

页码：1039 / 1045

页数：7

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