Comparing Different Switching Techniques For Silicon Carbide MOSFET Assisted Silicon IGBT Based Hybrid Switch

被引：0

作者：

Ozdemir, Sadik ^{[1
]}

Acar, Fatih ^{[1
]}

Selamogullari, Ugur S. ^{[1
]}

机构：

[1] Yildiz Tech Univ, Dept Elect Engn, Istanbul, Turkey

来源：

2015 INTL AEGEAN CONFERENCE ON ELECTRICAL MACHINES & POWER ELECTRONICS (ACEMP), 2015 INTL CONFERENCE ON OPTIMIZATION OF ELECTRICAL & ELECTRONIC EQUIPMENT (OPTIM) & 2015 INTL SYMPOSIUM ON ADVANCED ELECTROMECHANICAL MOTION SYSTEMS (ELECTROMOTION) | 2015年

关键词：

Light load efficiency; hybrid switch; synchronous rectification;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study compares different switching techniques for Silicon Carbide (SiC) MOSFET assisted Silicon (Si) IGBT based hybrid switch and presents the effect of hybrid switch control techniques on the efficiency improvement. The hybrid switch which parallels a IGBT with a SiC MOSFET is proposed as a solution to improve the light load efficiency. The hybrid switch combines desirable properties both IGBT and SiC MOSFET. Different operation modes of hybrid switch are analyzed in PSIM using a simple circuit and it is shown that the hybrid switch performs better compared to IGBT alone operation.

引用

页码：476 / 481

页数：6

共 50 条

[1] Comparing Different Switching Techniques For Silicon Carbide MOSFET Assisted Silicon IGBT Based Hybrid Switch
Ozdemir, Sadik
Acar, Fatih
Selamogullari, Ugur S.
5TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING AND INFORMATICS 2015, 2015, : 558 - 561
[2] Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid
Rahimo, Munaf
Canales, Francisco
Minamisawa, Renato Amaral
Papadopoulos, Charalampos
Vemulapati, Umamaheswara
Mihaila, Andrei
Kicin, Slavo
Drofenik, Uwe
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2015, 30 (09) : 4638 - 4642
[3] Analysis of a Clustered IGBT and Silicon Carbide MOSFET Hybrid Switch
Luo, Peng
Long, Hong Yao
Sweet, Mark R.
De Souza, M. M.
Narayanan, E. M. S.
2017 IEEE 26TH INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE), 2017, : 612 - 615
[4] The Characteristic and Switching Strategies of SiC MOSFET Assisted Si IGBT hybrid switch
Qin, Haihong
Wang, Dan
Zhang, Ying
Fu, Dafeng
Zhao, Chaohui
IECON 2017 - 43RD ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, 2017, : 1604 - 1609
[5] Modeling Techniques and Virtual Prototyping of Silicon Carbide MOSFET and IGBT Power Modules
Bazzano, Gaetano
Cavallaro, Daniela
Raffa, Alessandra
Di Giovanni, Filippo
Manzitto, Alessandra
Cascio, Alessandra
2020 2ND IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL ELECTRONICS FOR SUSTAINABLE ENERGY SYSTEMS (IESES), 2020, : 371 - 376
[6] Achieving Zero Switching Loss in Silicon Carbide MOSFET
Li, Xuan
Li, Xu
Liu, Pengkun
Guo, Suxuan
Zhan, Liqi
Huang, Alex Q.
Deng, Xiaochuan
Zhang, Bo
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 34 (12) : 12193 - 12199
[7] Investigation of Parasitic Turn-ON in Silicon IGBT and Silicon Carbide MOSFET Devices: A Technology Evaluation
Jahdi, Saeed
Alatise, Olayiwola
Ortiz-Gonzalez, Jose
Gammon, Peter
Ran, Li
Mawby, Phil
2015 17TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'15 ECCE-EUROPE), 2015,
[8] Analysis of switching frequency on performance of motor drive based on silicon carbide mosfet
Ton T.-D.
Chen N.-C.
Hsieh M.-F.
International Journal of Electrical Engineering, 2020, 27 (06): : 229 - 238
[9] Chip Screening for Parallel Silicon Carbide MOSFET Based on Switching Energy Balancing
Sun P.
Zhao Z.
Cai Y.
Yu Q.
Ke J.
Cui X.
Yang F.
Li J.
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2019, 39 (19): : 5613 - 5623
[10] Review of Si IGBT and SiC MOSFET based on hybrid switch
Ning P.
Yuan T.
Kang Y.
Han C.
Li L.
Chinese Journal of Electrical Engineering, 2019, 5 (03): : 20 - 29

← 1 2 3 4 5 →