Comparing Different Switching Techniques For Silicon Carbide MOSFET Assisted Silicon IGBT Based Hybrid Switch

被引：0

作者：

Ozdemir, Sadik ^{[1
]}

Acar, Fatih ^{[1
]}

Selamogullari, Ugur S. ^{[1
]}

机构：

[1] Yildiz Tech Univ, Dept Elect Engn, Istanbul, Turkey

来源：

2015 INTL AEGEAN CONFERENCE ON ELECTRICAL MACHINES & POWER ELECTRONICS (ACEMP), 2015 INTL CONFERENCE ON OPTIMIZATION OF ELECTRICAL & ELECTRONIC EQUIPMENT (OPTIM) & 2015 INTL SYMPOSIUM ON ADVANCED ELECTROMECHANICAL MOTION SYSTEMS (ELECTROMOTION) | 2015年

关键词：

Light load efficiency; hybrid switch; synchronous rectification;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study compares different switching techniques for Silicon Carbide (SiC) MOSFET assisted Silicon (Si) IGBT based hybrid switch and presents the effect of hybrid switch control techniques on the efficiency improvement. The hybrid switch which parallels a IGBT with a SiC MOSFET is proposed as a solution to improve the light load efficiency. The hybrid switch combines desirable properties both IGBT and SiC MOSFET. Different operation modes of hybrid switch are analyzed in PSIM using a simple circuit and it is shown that the hybrid switch performs better compared to IGBT alone operation.

引用

页码：476 / 481

页数：6

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