Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures

被引：0
|
作者：
Anwar, Saeed [1 ]
Wang, Zhiqiang [2 ]
Chinthavali, Madhu [2 ]
机构：
[1] Univ Tennessee, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Power Elect & Elect Machinery Grp, Knoxville, TN 37932 USA
来源：
2018 IEEE TRANSPORTATION AND ELECTRIFICATION CONFERENCE AND EXPO (ITEC) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the static and dynamic characteristics of discrete 650 V and 1200 V trench TO 247 SiC MOSFET is evaluated and compared with a similar current rating 1200 V planar gate discrete TO 247 SiC MOSFET. The new trench MOSFET has promising application for vehicle charging and auxiliary power supply application due to the lower on-state resistance and lower capacitance. Static characteristics for these devices are evaluated using a curve tracer for different device junction temperature A common double pulse test (DPT) platform is developed to evaluate the switching loss at different device junction temperature ranging from 25 degrees C to 175 degrees C. The experimental setup and results are presented for different load currents and temperature.
引用
收藏
页码：1039 / 1045
页数：7
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