Self-rectifying and forming-free resistive switching behaviors in Pt/ La2Ti2O7/Pt structure

In this work, we report the resistive switching behavior of an amorphous La2Ti2O7 (LTO) film as sandwiched between two Pt electrodes. The resistive switching is forming-free and highly uniform. Furthermore, it exhibits self-rectifying resistive switching behaviors owing to the Schottky contact and quasi-ohmic contact formed at the top and bottom interfaces, respectively. The mechanism of switching behavior in the device is attributed to the trapping/detrapping-mediated electronic bipolar resistance switching. By fitting the current-voltage characteristics, it indicates the coexistent conduction mechanisms of Schottky emission and space-charge-limitedconduction (SCLC), while the Schottky barrier modified by electron trapping/detrapping plays a dominating role in the resistive switching process.