Self-rectifying and forming-free nonvolatile memory behavior in single-crystal TiO2 nanowire memory device

被引：0
|
作者：
Yu, Zhiqiang [1 ,2 ]
Sun, Tangyou [2 ,3 ]
Liu, Baosheng [4 ]
Zhang, Liang [4 ]
Chen, Huajin [1 ]
Fan, Xiangsuo [1 ]
Sun, Zijun [4 ]
机构：
[1] School of Electrical and Information Engineering, Guangxi University of Science and Technology, Liuzhou,545006, China
[2] Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin,541004, China
[3] Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan,430074, China
[4] Research Centre for Materials Science and Engineering, Guangxi University of Science and Technology, Liuzhou,545006, China
来源：
Journal of Alloys and Compounds | 2021年 / 858卷
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