Self-rectifying and forming-free resistive switching behaviors in Pt/ La2Ti2O7/Pt structure

被引：13

作者：

Deng, Yibo ^{[1
]}

Xu, Xiaoguang ^{[1
]}

Xu, Zedong ^{[2
]}

Wang, Mengxi ^{[1
]}

Liu, Qi ^{[2
]}

Ma, Yingli ^{[1
]}

Chen, Jikun ^{[1
]}

Meng, Kangkang ^{[1
]}

Wu, Yong ^{[1
]}

Miao, Jun ^{[1
]}

Jiang, Yong ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2022年 / 48卷 / 04期

基金：

中国国家自然科学基金; 北京市自然科学基金;

关键词：

Self-rectifying; Forming-free; Resistive switching; Lanthanum titanium oxide; Schottky barrier; MEMORY; VOLTAGE; OXIDE;

D O I：

10.1016/j.ceramint.2021.11.005

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we report the resistive switching behavior of an amorphous La2Ti2O7 (LTO) film as sandwiched between two Pt electrodes. The resistive switching is forming-free and highly uniform. Furthermore, it exhibits self-rectifying resistive switching behaviors owing to the Schottky contact and quasi-ohmic contact formed at the top and bottom interfaces, respectively. The mechanism of switching behavior in the device is attributed to the trapping/detrapping-mediated electronic bipolar resistance switching. By fitting the current-voltage characteristics, it indicates the coexistent conduction mechanisms of Schottky emission and space-charge-limitedconduction (SCLC), while the Schottky barrier modified by electron trapping/detrapping plays a dominating role in the resistive switching process.

引用

页码：4693 / 4698

页数：6

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