Experimental validation of a simple analytical model for the electrical behaviour of nanoscale MOSFETS

被引：0
|
作者：
Sevcenco, A. [1 ]
Brezeanu, G. [1 ]
Badila, M. [2 ]
Draghici, F. [1 ]
Rusu, I. [1 ]
Visoreanu, A. [1 ]
机构：
[1] Univ Politehn Bucuresti, Bucharest, Romania
[2] Catalyst Semicond, Santa Clara, CA 95054 USA
来源：
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The validation of a new analytical model for the electrical characteristics of deep submicron MOS transistors is accomplished through theory-experiment comparison in this paper. The model is proven to be accurate in all predictions regarding the effect of velocity saturation on the parameters of nanoscale MOSFET: transconductance, transitions currents, etc. Experimental transfer characteristics of short channel devices match well with calculated curves based on the model, for different transistor geometries.
引用
收藏
页码：551 / +
页数：2
相关论文
共 50 条
  • [1] Nanoscale Thick FDSOI MOSFETs: A Simple Model of Abnormal Electrical Behavior at Low Temperature
    Karsenty, Avi
    Chelly, Avraham
    2014 IEEE 28TH CONVENTION OF ELECTRICAL & ELECTRONICS ENGINEERS IN ISRAEL (IEEEI), 2014,
  • [2] Analytical Model of Gate to Channel Capacitance for Nanoscale MOSFETs
    Chatterjee, Arun Kumar
    Prasad, B.
    IETE JOURNAL OF RESEARCH, 2020, 66 (05) : 608 - 616
  • [3] A SIMPLE ANALYTICAL MODEL FOR HOT-CARRIER MOSFETS
    ELBANNA, M
    ELNOKALI, MA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (05) : 979 - 986
  • [4] A SIMPLE ANALYTICAL MODEL FOR THE ELECTRICAL CHARACTERISTICS OF DEPLETION-MODE MOSFETS WITH APPLICATION TO LOW-TEMPERATURE OPERATION
    WILSON, KA
    TUXBURY, PL
    ANDERSON, RL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1731 - 1737
  • [5] Analytical drain current model for nanoscale strained-Si/SiGe MOSFETs
    Batwani, Himanshu
    Gaur, Mayank
    Kumar, M. Jagadesh
    COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 2009, 28 (02) : 353 - 371
  • [6] A simple analytical threshold voltage model of nanoscale single-layer fully depleted strained-silicon-on-insulator MOSFETs
    Kumar, M. Jagadesh
    Venkataraman, Vivek
    Nawal, Susheel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (10) : 2500 - 2506
  • [7] Analytical Model of Dynamic Behaviour of Fatigue Test Stand-Description and Experimental Validation
    Owsinski, R.
    Nieslony, A.
    DYNAMICAL SYSTEMS: MODELLING, 2016, 181 : 293 - 317
  • [8] The experimental validation of the analytical model, used to study the dynamic behaviour of a multilayer composite structure
    Bolcu, Dumitru
    Stanescu, Marius Marinel
    Ciuca, Ion
    Jiga, Gabriel
    Gheorghiu, Horia
    Iancului, Dumitru
    MATERIALE PLASTICE, 2008, 45 (02) : 137 - 142
  • [9] A Generalized Analytical Approach to Model the Gate Tunneling Current in Nanoscale Double Gate MOSFETs
    Kushwaha, Madhu
    Chatterjee, Arun Kumar
    Prasad, B.
    Chatterjee, A. K.
    Agarwal, Alpana
    SILICON, 2022, 14 (18) : 12513 - 12524
  • [10] A Generalized Analytical Approach to Model the Gate Tunneling Current in Nanoscale Double Gate MOSFETs
    Madhu Kushwaha
    Arun Kumar Chatterjee
    B. Prasad
    A. K. Chatterjee
    Alpana Agarwal
    Silicon, 2022, 14 : 12513 - 12524
12345