Experimental validation of a simple analytical model for the electrical behaviour of nanoscale MOSFETS

被引：0
|
作者：
Sevcenco, A. [1 ]
Brezeanu, G. [1 ]
Badila, M. [2 ]
Draghici, F. [1 ]
Rusu, I. [1 ]
Visoreanu, A. [1 ]
机构：
[1] Univ Politehn Bucuresti, Bucharest, Romania
[2] Catalyst Semicond, Santa Clara, CA 95054 USA
来源：
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The validation of a new analytical model for the electrical characteristics of deep submicron MOS transistors is accomplished through theory-experiment comparison in this paper. The model is proven to be accurate in all predictions regarding the effect of velocity saturation on the parameters of nanoscale MOSFET: transconductance, transitions currents, etc. Experimental transfer characteristics of short channel devices match well with calculated curves based on the model, for different transistor geometries.
引用
收藏
页码：551 / +
页数：2
相关论文
共 50 条
  • [21] Numerical simulation of electrical characteristics in nanoscale Si/GaAs MOSFETs
    Yiming Li
    Wei-Hsin Chen
    Journal of Computational Electronics, 2006, 5 : 255 - 258
  • [22] Verification of device model parameters for nanoscale MOSFETs
    Borovik, A.
    Kuleshov, A.
    Tran Tuan Trung
    2015 INTERNATIONAL CONFERENCE ON ADVANCED TECHNOLOGIES FOR COMMUNICATIONS (ATC), 2015, : 511 - 515
  • [23] Numerical simulation of electrical characteristics in nanoscale Si/GaAs MOSFETs
    Li, Yiming
    Chen, Wei-Hsin
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2006, 5 (2-3) : 255 - 258
  • [24] Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs
    Chen, Si-Hua
    Lian, Shang-Wei
    Wu, Tzung Rang
    Chang, Tay-Rong
    Liou, Jia-Ming
    Lu, Darsen D.
    Kao, Kuo-Hsing
    Chen, Nan-Yow
    Lee, Wen-Jay
    Tsai, Jyun-Hwei
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (06) : 2509 - 2512
  • [25] Analytical drain current model of nanoscale strained-Si/SiGe MOSFETs for analog circuit simulation
    Kumar, M. Jagadesh
    Venkataraman, Vivek
    Nawal, Susheel
    20TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS: TECHNOLOGY CHALLENGES IN THE NANOELECTRONICS ERA, 2007, : 189 - +
  • [26] Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models
    Cheralathan, Muthupandian
    Sampedro, Carlos
    Gamiz, Francisco
    Iniguez, Benjamin
    SOLID-STATE ELECTRONICS, 2014, 98 : 2 - 6
  • [27] A simple model of cardiac mitochondrial respiration with experimental validation
    Tarraf, Bachar
    Suraniti, Emmanuel
    Colin, Camille
    Arbault, Stephane
    Diolez, Philippe
    Leguebe, Michael
    Coudiere, Yves
    MATHEMATICAL BIOSCIENCES AND ENGINEERING, 2021, 18 (05) : 5758 - 5789
  • [28] Simple PEM water electrolyser model and experimental validation
    Garcia-Valverde, R.
    Espinosa, N.
    Urbina, A.
    INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2012, 37 (02) : 1927 - 1938
  • [29] ANALYTICAL DEVICE MODEL FOR SUBMICROMETER MOSFETS
    SONODA, K
    TANIGUCHI, K
    HAMAGUCHI, C
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) : 2662 - 2668
  • [30] ANALYTICAL AND EXPERIMENTAL STUDIES OF THERMAL NOISE IN MOSFETS
    TEDJA, S
    VANDERSPIEGEL, J
    WILLIAMS, HH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) : 2069 - 2075
12345