Experimental validation of a simple analytical model for the electrical behaviour of nanoscale MOSFETS

被引：0
|
作者：
Sevcenco, A. [1 ]
Brezeanu, G. [1 ]
Badila, M. [2 ]
Draghici, F. [1 ]
Rusu, I. [1 ]
Visoreanu, A. [1 ]
机构：
[1] Univ Politehn Bucuresti, Bucharest, Romania
[2] Catalyst Semicond, Santa Clara, CA 95054 USA
来源：
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The validation of a new analytical model for the electrical characteristics of deep submicron MOS transistors is accomplished through theory-experiment comparison in this paper. The model is proven to be accurate in all predictions regarding the effect of velocity saturation on the parameters of nanoscale MOSFET: transconductance, transitions currents, etc. Experimental transfer characteristics of short channel devices match well with calculated curves based on the model, for different transistor geometries.
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页码：551 / +
页数：2
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