Residual layer-free Reverse Nanoimprint Lithography on silicon and metal-coated substrates

被引:16
|
作者
Fernandez, Ariadna [1 ]
Medina, Juan [1 ]
Benkel, Christian [2 ]
Guttmann, Markus [2 ]
Bilenberg, Brian [3 ]
Thamdrup, Lasse H. [3 ]
Nielsen, Theodor [3 ]
Sotomayor Torres, Clivia M. [1 ,4 ]
Kehagias, Nikolaos [1 ]
机构
[1] Catalan Inst Nanosci & Nanotechnol, Barcelona 08193, Spain
[2] KIT, Inst Microstruct Technol, D-76344 Eggenstein Leopoldshafen, Germany
[3] NIL Technol ApS, DK-2800 Lyngby, Denmark
[4] ICREA, Barcelona 08010, Spain
关键词
Nanoimprint Lithography; Injection molding; Functional surfaces; WENZEL WETTING TRANSITION; IMPRINT LITHOGRAPHY; POLYMER; SURFACES; ENERGY;
D O I
10.1016/j.mee.2014.11.025
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work we demonstrate-that Reverse Nanoimprint Lithography is a feasible and flexible lithography technique applicable to the transfer of micro and nano polymer structures with no residual layer over areas of cm(2) areas on silicon, metal and non-planar substrates. We used a flexible polydimethylsiloxane stamp with hydrophobic features. We present residual layer-free patterns imprinted using a commercial poly(methylmethacrylate) thermoplastic polymer over silicon, nickel and pre-patterned substrates. Our versatile patterning technology is adaptable to free form nano structuring and has coupling to adhesion technologies. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:56 / 61
页数:6
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