Magnetoplasmon resonance in a two-dimensional electron system driven into a zero-resistance state

被引：11

作者：

Hatke, A. T. ^{[1
]}

Zudov, M. A. ^{[1
]}

Watson, J. D. ^{[2
,3
,4
]}

Manfra, M. J. ^{[2
,3
,4
]}

机构：

[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA

[2] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[3] Purdue Univ, Sch Mat Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 12期

关键词：

MAGNETORESISTANCE OSCILLATIONS; GAS; MOBILITY;

D O I：

10.1103/PhysRevB.85.121306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a very strong, and a rather sharp, photoresistance peak originating from a dimensional magnetoplasmon resonance (MPR) in a high-mobility GaAs/AlGaAs quantum well driven by microwave radiation into a zero-resistance state (ZRS). The analysis of the MPR signal reveals a negative background, providing experimental evidence for the concept of absolute negative resistance associated with the ZRS. When the system is further subject to a dc field, the maxima of microwave-induced resistance oscillations decay away and the system reveals a state with close-to-zero differential resistance. The MPR peak, on the other hand, remains essentially unchanged, indicating robust Ohmic behavior under the MPR conditions.

引用

页数：4

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