Magnetoplasmon resonance in a two-dimensional electron system driven into a zero-resistance state

被引:11
|
作者
Hatke, A. T. [1 ]
Zudov, M. A. [1 ]
Watson, J. D. [2 ,3 ,4 ]
Manfra, M. J. [2 ,3 ,4 ]
机构
[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA
[2] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
[3] Purdue Univ, Sch Mat Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
来源
PHYSICAL REVIEW B | 2012年 / 85卷 / 12期
关键词
MAGNETORESISTANCE OSCILLATIONS; GAS; MOBILITY;
D O I
10.1103/PhysRevB.85.121306
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on a very strong, and a rather sharp, photoresistance peak originating from a dimensional magnetoplasmon resonance (MPR) in a high-mobility GaAs/AlGaAs quantum well driven by microwave radiation into a zero-resistance state (ZRS). The analysis of the MPR signal reveals a negative background, providing experimental evidence for the concept of absolute negative resistance associated with the ZRS. When the system is further subject to a dc field, the maxima of microwave-induced resistance oscillations decay away and the system reveals a state with close-to-zero differential resistance. The MPR peak, on the other hand, remains essentially unchanged, indicating robust Ohmic behavior under the MPR conditions.
引用
收藏
页数:4
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