Residual resistance in a two-dimensional electron system: A phenomenological approach

被引:18
|
作者
Volkov, AF [1 ]
Pavlovskii, VV
机构
[1] Ruhr Univ Bochum, D-44780 Bochum, Germany
[2] Russian Acad Sci, Inst Radioengn & Elect, Moscow 103907, Russia
关键词
D O I
10.1103/PhysRevB.69.125305
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider a simple phenomenological model of a semiconductor with absolute negative conductance in a magnetic field. We find the form of the domains of the electric field and current which arise as a result of an instability of a uniform state. We show that in both Corbino disc and Hall bar samples the residual conductance and resistance are negative and exponentially small; they decrease exponentially with increasing length L-x,L-y.
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页数:5
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