Modeling the sensitivity of CMOS circuits to radiation induced single event transients

An accurate and computer efficient analytical model for the evaluation of integrated circuit sensitivity to radiation induced single event transients is presented. The key idea of the work is to exploit a model that allows the rapid determination of the sensitivity of any MOS circuit to single event transients (SETs), without the need to run circuit level simulations. To accomplish this task, both single event transient generation and its propagation through circuit logic stages are characterized and modeled. The model predicts whether or not a particle hit generates a transient pulse which may propagate to the next logic gate or memory element. The electrical masking (attenuation) of the transient pulse as it propagates through each stage of logic until it reaches a memory element is also modeled. Model derivation is in strong relation with circuit electrical behavior, being consistent with technology scaling. The model is suitable for integration into CAD-Tools, intending to make automated evaluation of circuit sensitivity to SEU possible. (c) 2007 Elsevier Ltd. All rights reserved.