Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction

被引：6

作者：

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore NUS, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT | 2010年 / 28卷 / 01期

关键词：

SILICON-CARBON SOURCE/DRAIN; N-CHANNEL FINFETS; SULFUR; SEGREGATION; INTEGRATION; TECHNOLOGY; SILICIDES; SELENIUM;

D O I：

10.1149/1.3375592

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Contact resistance is becoming an important limiting factor for achieving high MOSFET drive current and speed in future technology nodes. In this paper, we review the technology solutions for reducing the contact resistance between a metal silicide contact and the source/drain region. Several new approaches for decreasing the electron and hole barrier heights between the source/drain region and the silicide layer in n-FET and p-FET, respectively, will be examined. Integration of these approaches in advanced device architectures will be discussed.

引用

页码：91 / 102

页数：12

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