Schottky Barrier Height Reduction of NiGe/Ge Junction by P Ion Implantation for Metal Source/Drain Ge CMOS Devices

被引：0

作者：

Oka, Hiroshi ^{[1
]}

Minoura, Yuya ^{[1
]}

Hosoi, Takuji ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Mat & Life Sci, Suita, Osaka 5650871, Japan

来源：

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2014年

关键词：

germanium; ion implantation; nickel germanide; Schottky barrier height; junction characteristics; ACTIVATION; GERMANIUM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated effective electron Schottky barrier height (eSBH) reduction of NiGe/Ge contacts using phosphorus ion implantation after germanidation. The eSBH was drastically reduced from 0.62 eV to 0.09 eV under optimum implantation and subsequent annealing conditions. Moreover, systematic studies of NiGe/Ge contacts with various P ion profiles indicated the variation in the eSBH at NiGe/Ge interface. This method allows us to design and control junction characteristics for future Ge-based devices.

引用

页数：2

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