Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction

被引：6
|
作者：
Yeo, Yee-Chia [1 ]
机构：
[1] Natl Univ Singapore NUS, Dept Elect & Comp Engn, Singapore 117576, Singapore
来源：
ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT | 2010年 / 28卷 / 01期
关键词：
SILICON-CARBON SOURCE/DRAIN; N-CHANNEL FINFETS; SULFUR; SEGREGATION; INTEGRATION; TECHNOLOGY; SILICIDES; SELENIUM;
D O I：
10.1149/1.3375592
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Contact resistance is becoming an important limiting factor for achieving high MOSFET drive current and speed in future technology nodes. In this paper, we review the technology solutions for reducing the contact resistance between a metal silicide contact and the source/drain region. Several new approaches for decreasing the electron and hole barrier heights between the source/drain region and the silicide layer in n-FET and p-FET, respectively, will be examined. Integration of these approaches in advanced device architectures will be discussed.
引用
收藏
页码：91 / 102
页数：12
相关论文
共 50 条
  • [21] Low Schottky barrier on n-type Si for n-channel Schottky source/drain MOSFETs
    Tao, M
    Udeshi, D
    Agarwal, S
    Basit, N
    Maldonado, E
    Kirk, WP
    COMOS FRONT-END MATERIALS AND PROCESS TECHNOLOGY, 2003, 765 : 297 - 302
  • [22] Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts
    Nishisaka, M
    Asano, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1295 - 1299
  • [23] A simple method to extract source/drain series resistance for advanced MOSFETs
    Chang, Y. H.
    Wu, Y. F.
    Ho, C. S.
    EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 87 - 90
  • [24] Schottky barrier height reduction and drive current improvement in metal source/drain MOSFET with strained-Si channel
    Yagishita, A. (yagishita@amc.toshiba.co.jp), 1713, Japan Society of Applied Physics (43):
  • [25] Schottky barrier height reduction and drive current improvement in metal source/drain MOSFET with strained-Si channel
    Yagishita, A
    King, TJ
    Bokor, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (4B): : 1713 - 1716
  • [26] A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain
    Zhu, Guojun
    Zhou, Xing
    Lee, Teck Seng
    Ang, Lay Kee
    See, Guan Huei
    Lin, Shihuan
    Chin, Yoke-King
    Pey, Kin Leong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (05) : 1100 - 1109
  • [27] SOURCE AND DRAIN RESISTANCE DETERMINATION FOR MOSFETS
    SEAVEY, MH
    IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 479 - 481
  • [28] Drain Current Modeling of Gallium Nitride Schottky Barrier MOSFETs
    Seol, Jeong-Hoon
    Hahm, Sung-Ho
    2017 15TH INTERNATIONAL CONFERENCE ON QUALITY IN RESEARCH (QIR) - INTERNATIONAL SYMPOSIUM ON ELECTRICAL AND COMPUTER ENGINEERING, 2017, : 497 - 500
  • [29] SOURCE DRAIN CONTACT RESISTANCE OF SILICIDED THIN-FILM SOI MOSFETS
    SUZUKI, K
    TANAKA, T
    TOSAKA, Y
    SUGII, T
    ANDOH, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) : 1007 - 1012
  • [30] Tuning the Schottky barrier height of the Pd-MoS2 contact by different strains
    Liu, Biao
    Wu, Li-Juan
    Zhao, Yu-Qing
    Wang, Ling-Zhi
    Cai, Meng-Qiu
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (40) : 27088 - 27093
12345