Large-Signal Characterization of Power FinFETs Based on X-Parameter Model

被引：0

作者：

Chen, Kun-Ming ^{[1
]}

Yang, Zhi-Xin ^{[2
]}

Hu, Hsin-Hui ^{[2
]}

Tsai, Ting-Yi ^{[1
]}

Chen, Bo-Yuan ^{[1
]}

Chuang, Chia-Wei ^{[1
]}

Chiu, Chia-Sung ^{[1
]}

Huang, Guo-Wei ^{[1
]}

机构：

[1] Taiwan Semicondictor Res Inst, Hsinchu, Taiwan

[2] Natl Taipei Univ Technol, Dept Elect Engn, Taipei, Taiwan

来源：

PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2019年

关键词：

FinFET power; radio frequency (RF); silicon; X-parameter; ANALOG;

D O I：

10.1109/apmc46564.2019.9038790

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

The large-signal characteristics of power FinFETs based on the X-paratneter model are presented. FinFET devices with various drain-extension structures were fabricated using a standard silicon FinFET process. The X-parameters were measured using a nonlinear vector network analyzer at 2.4 GHz. The output powers at fundamental and harmonic frequencies derived from X-parameters are compared between different device structures to determine the suitable design method for RF power applications. The large-signal behavior of devices is explained by the X-parameters related to output powers and output impedances.

引用

页码：297 / 299

页数：3

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