Large-Signal Characterization of Power FinFETs Based on X-Parameter Model

被引：0
|
作者：
Chen, Kun-Ming [1 ]
Yang, Zhi-Xin [2 ]
Hu, Hsin-Hui [2 ]
Tsai, Ting-Yi [1 ]
Chen, Bo-Yuan [1 ]
Chuang, Chia-Wei [1 ]
Chiu, Chia-Sung [1 ]
Huang, Guo-Wei [1 ]
机构：
[1] Taiwan Semicondictor Res Inst, Hsinchu, Taiwan
[2] Natl Taipei Univ Technol, Dept Elect Engn, Taipei, Taiwan
来源：
PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2019年
关键词：
FinFET power; radio frequency (RF); silicon; X-parameter; ANALOG;
D O I：
10.1109/apmc46564.2019.9038790
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
The large-signal characteristics of power FinFETs based on the X-paratneter model are presented. FinFET devices with various drain-extension structures were fabricated using a standard silicon FinFET process. The X-parameters were measured using a nonlinear vector network analyzer at 2.4 GHz. The output powers at fundamental and harmonic frequencies derived from X-parameters are compared between different device structures to determine the suitable design method for RF power applications. The large-signal behavior of devices is explained by the X-parameters related to output powers and output impedances.
引用
收藏
页码：297 / 299
页数：3
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