A Simple and Fast De-Embedding Procedure of X-Parameter Measurement for RF Transistor Characterization in the Large-Signal Operating Region

In this paper, a simple and fast de-embedding procedure suitable for the X-parameter measurement is presented. The X-parameters of the dummy structures including open and short are measured and then directly subtracted from the device under test (DUT) to remove parasitic effects. Compared with the conventional procedure, this approach can provide a fast and simple algorithm based on the matrix transformation to implement DUT de-embedding for the X-parameter measurement. The presented X-parameter deembedding procedure can be applied to radio-frequency (RF) transistor characterization in the large-signal operating region.