Study of surface blistering in GaN by hydrogen implantation at elevated temperatures

被引：11
|
作者：
Li, B. S. [1 ]
Wang, Z. G. [1 ]
Zhang, H. P. [1 ]
机构：
[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
来源：
THIN SOLID FILMS | 2015年 / 590卷
基金：
中国国家自然科学基金; 中国科学院西部之光基金;
关键词：
Implantation; Cross-sectional transmission electron microscopy; Dislocation loops; Blisters; Exfoliation; SILICON; LAYER; EXFOLIATION; GROWTH;
D O I：
10.1016/j.tsf.2015.07.039
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated mechanisms of ion-cut in H-2(+)-implanted GaN by analyzing microstructural features of H-2(+)-implanted GaN at room temperature, 573 K and 723 K. Using optical microscopy and transmission electron microscopy, it was found that the in-plane compressive stress induced by the H-implantation was necessary for H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient in-plane compressive stress to induce surface blistering. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：64 / 70
页数：7
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