Study of surface blistering in GaN by hydrogen implantation at elevated temperatures

被引：11

作者：

Li, B. S. ^{[1
]}

Wang, Z. G. ^{[1
]}

Zhang, H. P. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

来源：

THIN SOLID FILMS | 2015年 / 590卷

基金：

中国国家自然科学基金; 中国科学院西部之光基金;

关键词：

Implantation; Cross-sectional transmission electron microscopy; Dislocation loops; Blisters; Exfoliation; SILICON; LAYER; EXFOLIATION; GROWTH;

D O I：

10.1016/j.tsf.2015.07.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated mechanisms of ion-cut in H-2(+)-implanted GaN by analyzing microstructural features of H-2(+)-implanted GaN at room temperature, 573 K and 723 K. Using optical microscopy and transmission electron microscopy, it was found that the in-plane compressive stress induced by the H-implantation was necessary for H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient in-plane compressive stress to induce surface blistering. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：64 / 70

页数：7

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