Implantation doping and hydrogen passivation of GaN

被引：0
|
作者：
Burchard, A. [1 ]
Deicher, M. [1 ]
Forkel-Wirth, D. [1 ]
Haller, E.E. [1 ]
Magerle, R. [1 ]
Prospero, A. [1 ]
Stoetzler, A. [1 ]
机构：
[1] Universitaet Konstanz, Konstanz, Germany
来源：
Materials Science Forum | 1997年 / 258-263卷 / pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1099 / 1104
相关论文
共 50 条
  • [1] Implantation doping and hydrogen passivation of GaN
    Burchard, A
    Deicher, M
    Forkel-Wirth, D
    Haller, EE
    Magerle, R
    Prospero, A
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1099 - 1104
  • [2] Implantation doping of GaN
    Zolper, JC
    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY - PROCEEDINGS OF THE FOURTEENTH INTERNATIONAL CONFERENCE, PTS 1 AND 2, 1997, (392): : 1017 - 1020
  • [3] Hydrogen passivation of Ca acceptors in GaN
    Lee, JW
    Pearton, SJ
    Zolper, JC
    Stall, RA
    APPLIED PHYSICS LETTERS, 1996, 68 (15) : 2102 - 2104
  • [4] Passivation of acceptors in GaN by hydrogen and their activation
    Reshchikov, M. A.
    Andrieiev, O.
    Vorobiov, M.
    Ye, D.
    Demchenko, D. O.
    Mcewen, B.
    Shahedipour-Sandvik, F.
    NANOTECHNOLOGY, 2025, 36 (10)
  • [5] PASSIVATION EFFECTS IN POLYSILICON BY HYDROGEN IMPLANTATION
    GREVE, DW
    CHEN, DL
    GUZMAN, AM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1982 - 1982
  • [6] Role of hydrogen in doping of GaN
    Neugebauer, J
    Van de Walle, CG
    APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1829 - 1831
  • [7] Effects of hydrogen implantation into GaN
    Pearton, SJ
    Abernathy, CR
    Wilson, RG
    Zavada, JM
    Song, CY
    Weinstein, MG
    Stavola, M
    Han, J
    Shul, RJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 147 (1-4): : 171 - 174
  • [8] Role of hydrogen and hydrogen complexes in doping of GaN
    Neugebauer, J
    Van de Walle, CG
    III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 619 - 624
  • [9] ELECTRICAL PASSIVATION IN HYDROGEN PLASMA EXPOSED GAN
    PEARTON, SJ
    ABERNATHY, CR
    REN, F
    ELECTRONICS LETTERS, 1994, 30 (06) : 527 - 528
  • [10] Ion implantation doping of OMCVD grown GaN
    Edwards, A
    Rao, MV
    Molnar, B
    Wickenden, AE
    Holland, OW
    Chi, PH
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 334 - 339
12345