Implantation doping and hydrogen passivation of GaN

被引：0
|
作者：
Burchard, A. [1 ]
Deicher, M. [1 ]
Forkel-Wirth, D. [1 ]
Haller, E.E. [1 ]
Magerle, R. [1 ]
Prospero, A. [1 ]
Stoetzler, A. [1 ]
机构：
[1] Universitaet Konstanz, Konstanz, Germany
来源：
Materials Science Forum | 1997年 / 258-263卷 / pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1099 / 1104
相关论文
共 50 条
  • [21] Boron and aluminium doping in SiC and its passivation by hydrogen
    Deák, P
    Aradi, B
    Gali, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (40) : 9019 - 9026
  • [22] Passivation of active recombination centers in ZnO by hydrogen doping
    Ohashi, N
    Ishigaki, T
    Okada, N
    Taguchi, H
    Sakaguchi, I
    Hishita, S
    Sekiguchi, T
    Haneda, H
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 6386 - 6392
  • [23] Hydrogen passivation of deep levels in n-GaN
    Hierro, A
    Ringel, SA
    Hansen, M
    Speck, JS
    Mishra, UK
    DenBaars, SP
    APPLIED PHYSICS LETTERS, 2000, 77 (10) : 1499 - 1501
  • [24] Ion implantation doping and high temperature annealing of GaN
    Zolper, JC
    Crawford, MH
    Howard, AJ
    Pearton, SJ
    Abernathy, CR
    Vartuli, CB
    Yuan, C
    Stall, RA
    Ramer, J
    Hersee, SD
    Wilson, RG
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 801 - 806
  • [25] In-situ doping and implantation of GaN layers with Mn
    Sofer, Zdenek
    Sedmidubsky, David
    Stejskal, Josef
    Hejtmanek, Jiri
    Marysko, Miroslav
    Jurek, Karel
    Havranek, Vladimir
    Mackova, Anna
    Hardtdegen, Hilde
    Vaclavu, Michal
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S646 - S649
  • [26] P-type doping in GaN through be implantation
    Feng, ZC
    Sun, YJ
    Tan, LS
    Chua, SJ
    Yu, JW
    Yang, CC
    Lu, W
    Collins, WE
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2415 - 2419
  • [27] Doping of GaN grown on silicon via ion implantation
    Mazen, Frederic
    Coig, Marianne
    Lardeau-Falcy, Aurelien
    Amichi, Lynda
    Veillerot, Marc
    Licitra, C.
    Grenier, Adeline
    Biscarrat, Jerome
    Kanyandekwe, Joel
    Charles, Matthew
    Milesi, Frederic
    2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2019,
  • [28] Passivation of copper films with magnesium doping using recoil ion implantation
    Wu, ZC
    Liu, YL
    Chen, MC
    THIN SOLID FILMS, 2000, 358 (1-2) : 180 - 186
  • [29] Investigation of hydrogen implantation induced blistering in GaN
    Singh, R.
    Radu, I.
    Gosele, U.
    Christiansen, S. H.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 1754 - 1757
  • [30] Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions
    Santos, P.
    Coutinho, J.
    Torres, V. J. B.
    Rayson, M. J.
    Briddon, P. R.
    APPLIED PHYSICS LETTERS, 2014, 105 (03)
12345