Ion implantation doping and high temperature annealing of GaN

被引：0

作者：

Zolper, JC ^{[1
]}

Crawford, MH ^{[1
]}

Howard, AJ ^{[1
]}

Pearton, SJ ^{[1
]}

Abernathy, CR ^{[1
]}

Vartuli, CB ^{[1
]}

Yuan, C ^{[1
]}

Stall, RA ^{[1
]}

Ramer, J ^{[1
]}

Hersee, SD ^{[1
]}

Wilson, RG ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：801 / 806

页数：6

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