Ion implantation doping and high temperature annealing of GaN

被引：0
|
作者：
Zolper, JC [1 ]
Crawford, MH [1 ]
Howard, AJ [1 ]
Pearton, SJ [1 ]
Abernathy, CR [1 ]
Vartuli, CB [1 ]
Yuan, C [1 ]
Stall, RA [1 ]
Ramer, J [1 ]
Hersee, SD [1 ]
Wilson, RG [1 ]
机构：
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：801 / 806
页数：6
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