Implantation doping and hydrogen passivation of GaN

被引：0
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作者：
Burchard, A. [1 ]
Deicher, M. [1 ]
Forkel-Wirth, D. [1 ]
Haller, E.E. [1 ]
Magerle, R. [1 ]
Prospero, A. [1 ]
Stoetzler, A. [1 ]
机构：
[1] Universitaet Konstanz, Konstanz, Germany
来源：
Materials Science Forum | 1997年 / 258-263卷 / pt 2期
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页码：1099 / 1104
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