Photoemission study of the solid-state interdiffusion in hybrid Fe/ZnSe/GaAs(001) heterostructures

被引：10

作者：

Mosca, DH

Abbate, M

Schreiner, WH

Etgens, VH

Eddrief, M

机构：

[1] UFPR, Ctr Politecn, Dept Fis, Lab Superficies & Interfaces, BR-81531990 Curitiba, Parana, Brazil

[2] Univ Paris 06, Lab Mineral & Cristallog Paris, CNRS, F-75252 Paris, France

[3] Univ Paris 07, F-75252 Paris, France

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 12期

关键词：

D O I：

10.1063/1.1416142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the chemical stability of the hybrid Fe/ZnSe/GaAs heterostructure prepared by molecular-beam epitaxy. Analyses of photoemission spectra show a remarkable chemical stability of the Fe/ZnSe(001) interface up to 380 degreesC, where the effective disruption of the heterostructure occurs, together with the appearance of Ga atoms near the film surface. This suggests that the ZnSe/GaAs interface is surprisingly less stable than the Fe/ZnSe one. (C) 2001 American Institute of Physics.

引用

页码：5973 / 5978

页数：6

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