Photoemission study of the solid-state interdiffusion in hybrid Fe/ZnSe/GaAs(001) heterostructures

被引：10
|
作者：
Mosca, DH
Abbate, M
Schreiner, WH
Etgens, VH
Eddrief, M
机构：
[1] UFPR, Ctr Politecn, Dept Fis, Lab Superficies & Interfaces, BR-81531990 Curitiba, Parana, Brazil
[2] Univ Paris 06, Lab Mineral & Cristallog Paris, CNRS, F-75252 Paris, France
[3] Univ Paris 07, F-75252 Paris, France
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 12期
关键词：
D O I：
10.1063/1.1416142
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the chemical stability of the hybrid Fe/ZnSe/GaAs heterostructure prepared by molecular-beam epitaxy. Analyses of photoemission spectra show a remarkable chemical stability of the Fe/ZnSe(001) interface up to 380 degreesC, where the effective disruption of the heterostructure occurs, together with the appearance of Ga atoms near the film surface. This suggests that the ZnSe/GaAs interface is surprisingly less stable than the Fe/ZnSe one. (C) 2001 American Institute of Physics.
引用
收藏
页码：5973 / 5978
页数：6
相关论文
共 50 条
  • [11] Photovoltaic study of ZnSe/GaAs heterostructures
    Wang, JB
    Chen, DY
    Jin, CX
    Lu, F
    Sun, HH
    Wang, X
    PHYSICAL REVIEW B, 1997, 56 (03): : 1416 - 1421
  • [12] Solid-state interdiffusion mechanism in strained Si1-xGex/Si heterostructures
    Kim, K
    Kim, HS
    Kim, JY
    Lee, YH
    Lee, HJ
    Lee, HJ
    Ryu, H
    JOURNAL OF SOLID STATE ELECTROCHEMISTRY, 1997, 1 (03) : 221 - 226
  • [13] Solid-state interdiffusion mechanism in strained Si1–xGex/Si heterostructures
    Keunjoo Kim
    Hong Seub Kim
    Jae Yon Kim
    Young Hee Lee
    Hyung Jae Lee
    Hwack Joo Lee
    Hyun Ryu
    Journal of Solid State Electrochemistry, 1997, 1 : 221 - 226
  • [14] RAMAN STUDIES OF THE GROWTH-MECHANISM OF ZNSE/GAAS(001) HETEROSTRUCTURES
    BAUER, S
    BERGER, H
    LINK, P
    GEBHARDT, W
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) : 3916 - 3920
  • [15] TEM STUDY OF NIGA/(001)GAAS AND GAAS/NIGA/(001)GAAS HETEROSTRUCTURES
    GUENAIS, B
    POUDOULEC, A
    DUREL, V
    BALLINI, Y
    GUIVARCH, A
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 257 - 260
  • [16] Solid state interdiffusions in epitaxial Fe/GaAs(001) heterostructures during ultrahigh vacuum annealings up to 450°C
    Lepine, B
    Ababou, S
    Guivarc'h, A
    Jezequel, G
    Deputier, S
    Guerin, R
    Filipe, A
    Schuhl, A
    Abel, F
    Cohen, C
    Rocher, A
    Crestou, J
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) : 3077 - 3080
  • [17] Fe/GaAs(001) and Fe/GaSb(001) heterostructures:: epitaxial growth and magnetic properties
    Lépine, B
    Lallaizon, C
    Ababou, S
    Guivarc'h, A
    Députier, S
    Filipe, A
    Van Dau, FN
    Schuhl, A
    Abel, F
    Cohen, C
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 702 - 706
  • [18] Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission
    Eddrief, M
    Marangolo, M
    Corlevi, S
    Guichar, GM
    Etgens, VH
    Mattana, R
    Mosca, DH
    Sirotti, F
    APPLIED PHYSICS LETTERS, 2002, 81 (24) : 4553 - 4555
  • [19] Study of the interface of ZnSe/GaAs(110) heterostructures
    Chaudhari, GN
    Manorama, SV
    Rao, VJ
    INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 1996, 3 (05) : 215 - 218
  • [20] Ballistic spin injection from Fe(001) into ZnSe and GaAs
    Wunnicke, O
    Mavropoulos, P
    Zeller, R
    Dederichs, PH
    Grundler, D
    PHYSICAL REVIEW B, 2002, 65 (24) : 2413061 - 2413064
12345