Photoemission study of the solid-state interdiffusion in hybrid Fe/ZnSe/GaAs(001) heterostructures

被引：10
|
作者：
Mosca, DH
Abbate, M
Schreiner, WH
Etgens, VH
Eddrief, M
机构：
[1] UFPR, Ctr Politecn, Dept Fis, Lab Superficies & Interfaces, BR-81531990 Curitiba, Parana, Brazil
[2] Univ Paris 06, Lab Mineral & Cristallog Paris, CNRS, F-75252 Paris, France
[3] Univ Paris 07, F-75252 Paris, France
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 12期
关键词：
D O I：
10.1063/1.1416142
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the chemical stability of the hybrid Fe/ZnSe/GaAs heterostructure prepared by molecular-beam epitaxy. Analyses of photoemission spectra show a remarkable chemical stability of the Fe/ZnSe(001) interface up to 380 degreesC, where the effective disruption of the heterostructure occurs, together with the appearance of Ga atoms near the film surface. This suggests that the ZnSe/GaAs interface is surprisingly less stable than the Fe/ZnSe one. (C) 2001 American Institute of Physics.
引用
收藏
页码：5973 / 5978
页数：6
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