Ion beam induced mixing at Co/Si interface

被引：7
|
作者：
Agarwal, Garima [1 ]
Sharma, Pratibha [1 ]
Jain, Ankur [1 ]
Lal, Chhagan [1 ]
Kabiraj, D. [2 ]
Jain, I. P. [1 ]
机构：
[1] Univ Rajasthan, Ctr Nonconvent Energy Resources, Jaipur 302004, Rajasthan, India
[2] Inter Univ Accelerator Ctr, New Delhi, India
来源：
VACUUM | 2008年 / 83卷 / 02期
关键词：
Interface; Silicide; Ion beam mixing; Electronic excitation; RBS;
D O I：
10.1016/j.vacuum.2008.05.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ion beam mixing has emerged as a technique for understanding reactivity and chemistry at metal/Si interface and may find its applications in the field of microelectronics. We have investigated ion beam mixing at Co/Si interface induced by electronic excitation using 120 MeV Au+9 ion irradiation at different fluences, varying from 10(12) to 10(14) ions/cm(2). Mixing was investigated by Rutherford Backscattering Spectroscopy (RBS) as a function of ion fluence and its mechanism across the interface is explained by the thermal spike model. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：397 / 400
页数：4
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