Ion beam induced mixing at Co/Si interface

被引：7

作者：

Agarwal, Garima ^{[1
]}

Sharma, Pratibha ^{[1
]}

Jain, Ankur ^{[1
]}

Lal, Chhagan ^{[1
]}

Kabiraj, D. ^{[2
]}

Jain, I. P. ^{[1
]}

机构：

[1] Univ Rajasthan, Ctr Nonconvent Energy Resources, Jaipur 302004, Rajasthan, India

[2] Inter Univ Accelerator Ctr, New Delhi, India

来源：

VACUUM | 2008年 / 83卷 / 02期

关键词：

Interface; Silicide; Ion beam mixing; Electronic excitation; RBS;

D O I：

10.1016/j.vacuum.2008.05.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ion beam mixing has emerged as a technique for understanding reactivity and chemistry at metal/Si interface and may find its applications in the field of microelectronics. We have investigated ion beam mixing at Co/Si interface induced by electronic excitation using 120 MeV Au+9 ion irradiation at different fluences, varying from 10(12) to 10(14) ions/cm(2). Mixing was investigated by Rutherford Backscattering Spectroscopy (RBS) as a function of ion fluence and its mechanism across the interface is explained by the thermal spike model. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：397 / 400

页数：4

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