Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

被引：117

作者：

Heidel, David F. ^{[1
]}

Marshall, Paul W. ^{[2
]}

LaBel, Kenneth A. ^{[3
]}

Schwank, James R. ^{[4
]}

Rodbell, Kenneth P. ^{[1
]}

Hakey, Mark C. ^{[5
]}

Berg, Melanie D. ^{[6
]}

Dodd, Paul E. ^{[4
]}

Friendlich, Mark R. ^{[6
]}

Phan, Anthony D. ^{[6
]}

Seidleck, Christina M. ^{[6
]}

Shaneyfelt, Marty R. ^{[4
]}

Xapsos, Michael A. ^{[3
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] NASA, Brookneal, VA 24528 USA

[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[4] Sandia Natl Labs, Albuquerque, NM 87175 USA

[5] IBM Syst & Technol Grp, Essex Jct, VT 05452 USA

[6] MEI Technol, Greenbelt, MD 20771 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期

基金：

美国能源部;

关键词：

Proton irradiation; silicon-on-insulator (SOI) technology; single event upset (SEU); SRAM;

D O I：

10.1109/TNS.2008.2005499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results are very different for the 65 nm SRAM as compared with SRAMs fabricated in previous technology generations. Specifically, no upset threshold is observed as the proton energy is decreased down to 1 MeV; and a sharp rise in the upset cross-section is observed below 1 MeV. The increase below 1 MeV is attributed to upsets caused by direct ionization from the low energy protons. The implications of the low energy proton upsets are discussed for space applications of 65 nm SRAMs; and the implications for radiation assurance testing are also discussed.

引用

页码：3394 / 3400

页数：7

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