Surface Activated Room-temperature Bonding in Ar Gas Ambience for MEMS Encapsulation

被引：0
|
作者：
Takagi, Hideki [1 ]
Kurashima, Yuichi [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Ubiquitous MEMS & Micro Engn UMEMSME, Namiki 1-2-1, Tsukuba, Ibaraki 3058564, Japan
来源：
2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2017年
关键词：
SILICON-WAFERS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Surface activated room-temperature bonding of Si and sapphire wafers in high purity inert gas was examined to package MEMS devices in various pressures. Si and sapphire wafers were successfully bonded in Ar gas ambience up to 90 kPa, almost the atmospheric pressure.
引用
收藏
页码：46 / 46
页数：1
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