Surface Activated Room-temperature Bonding in Ar Gas Ambience for MEMS Encapsulation

被引:0
|
作者
Takagi, Hideki [1 ]
Kurashima, Yuichi [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Ubiquitous MEMS & Micro Engn UMEMSME, Namiki 1-2-1, Tsukuba, Ibaraki 3058564, Japan
关键词
SILICON-WAFERS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Surface activated room-temperature bonding of Si and sapphire wafers in high purity inert gas was examined to package MEMS devices in various pressures. Si and sapphire wafers were successfully bonded in Ar gas ambience up to 90 kPa, almost the atmospheric pressure.
引用
收藏
页码:46 / 46
页数:1
相关论文
共 50 条
  • [31] Development of STJ for neutron detector on Si-LBO hybrid substrate by surface-activated room-temperature bonding
    Endo, S.
    Fujii, G.
    Ukibe, M.
    Takagi, H.
    Ohkubo, M.
    Naruse, M.
    Myoren, H.
    Otani, C.
    Taino, T.
    29TH INTERNATIONAL SYMPOSIUM ON SUPERCONDUCTIVITY, 2017, 871
  • [32] Silicon wafer bonding at room temperature by Ar beam surface activation in vacuum
    Takagi, H
    Maeda, R
    Chung, TR
    Suga, T
    SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS IV, 1998, 36 : 393 - 400
  • [33] Room temperature vacuum sealing using surface activated bonding method
    Itoh, T
    Okada, H
    Takagi, H
    Maeda, R
    Suga, T
    BOSTON TRANSDUCERS'03: DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2003, : 1828 - 1831
  • [34] Surface Activated Bonding of LiNbO3 and GaN at Room Temperature
    Takigawa, R.
    Higurashi, E.
    Asano, T.
    SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS 15, 2018, 86 (05): : 207 - 213
  • [35] Halogen bonding in room-temperature phosphorescent materials
    Wang, Weizhou
    Zhang, Yu
    Jin, Wei Jun
    COORDINATION CHEMISTRY REVIEWS, 2020, 404
  • [36] Mechanism of bond formation and effects of surface roughness in room-temperature wafer bonding
    Takagi, Hideki
    Yosetsu Gakkai Shi/Journal of the Japan Welding Society, 2000, 69 (02): : 62 - 64
  • [37] Room-Temperature Wafer Direct Bonding Using Surface Smoothing by Ion Beam
    Takagi, Hideki
    Kurashima, Yuichi
    Maeda, Atsuhiko
    Journal of Japan Institute of Electronics Packaging, 2015, 18 (07) : 469 - 473
  • [38] Room-temperature direct bonding of diamond and Al
    Liang, Jianbo
    Yamajo, Shoji
    Kuball, Martin
    Shigekawa, Naoteru
    SCRIPTA MATERIALIA, 2019, 159 : 58 - 61
  • [40] Room-temperature solder bonding of electronic packages
    Reactive NanoTechnologies
    不详
    不详
    Adv Packag, 2006, 5 (20):