Surface Activated Room-temperature Bonding in Ar Gas Ambience for MEMS Encapsulation

被引：0
|
作者：
Takagi, Hideki [1 ]
Kurashima, Yuichi [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Ubiquitous MEMS & Micro Engn UMEMSME, Namiki 1-2-1, Tsukuba, Ibaraki 3058564, Japan
来源：
2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2017年
关键词：
SILICON-WAFERS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Surface activated room-temperature bonding of Si and sapphire wafers in high purity inert gas was examined to package MEMS devices in various pressures. Si and sapphire wafers were successfully bonded in Ar gas ambience up to 90 kPa, almost the atmospheric pressure.
引用
收藏
页码：46 / 46
页数：1
相关论文
共 50 条
  • [21] Surface activated bonding of aluminum oxide films at room temperature
    Utsumi, Jun
    Takigawa, Ryo
    SCRIPTA MATERIALIA, 2021, 191 : 215 - 218
  • [22] Tiny Integrated Laser by Room Temperature Surface Activated Bonding
    Kausas, Arvydas
    Zheng, Lihe
    Taira, Takunori
    PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2019, : 6 - 6
  • [23] UHV room temperature joining by the surface activated bonding method
    Res. Ctr. for Adv. Sci. and Technol., University of Tokyo, Tokyo, Japan
    Ind Ceram, 3 (176-178):
  • [24] Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature
    Ohno, Yutaka
    Miyagawa, Reina
    Yoshida, Hideto
    Takeda, Seiji
    Liang, Jianbo
    Shigekawa, Naoteru
    PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2019, : 2 - 2
  • [25] Novel Room-Temperature Fluorine Containing Plasma Activated Bonding and Its Improvements
    Wang, Chenxi
    Suga, Tadatomo
    2010 11TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP), 2010, : 34 - 39
  • [26] Room-Temperature Bonding Technique Based on Copper Nanowire Surface Fastener
    Wang, Peng
    Ju, Yang
    Chen, Mingji
    Hosoi, Atsushi
    Song, Yuanhui
    Iwasaki, Yuka
    APPLIED PHYSICS EXPRESS, 2013, 6 (03)
  • [27] Characterization of Hysteresis of Surface Energy in Room-Temperature Direct Bonding Processes
    Grierson, David S.
    Turner, Kevin T.
    SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE, 2010, 33 (04): : 573 - 580
  • [28] High-quality, room-temperature, surface-activated bonding of GaInAsP/InP membrane structure on silicon
    Fang, Weicheng
    Takahashi, Naoki
    Ohiso, Yoshitaka
    Amemiya, Tomohiro
    Nishiyama, Nobuhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (06)
  • [29] Room-temperature quasi-direct bonding of LiNbO3 and SiC wafers using modified surface activated bonding method
    Matsunobu, Kosei
    Takigawa, Ryo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2025, 64 (04)
  • [30] Ionic-Activated Chemiresistive Gas Sensors for Room-Temperature Operation
    Song, Young Geun
    Shim, Young-Seok
    Suh, Jun Min
    Noh, Myoung-Sub
    Kim, Gwang Su
    Choi, Kyoung Soon
    Jeong, Beomgyun
    Kim, Sangtae
    Jang, Ho Won
    Ju, Byeong-Kwon
    Kang, Chong-Yun
    SMALL, 2019, 15 (40)
12345