Rough surface improved formation-free low power resistive switching memory using IrOx/GdOx/W structure

被引：0

作者：

Jana, D. ^{[1
]}

Maikap, S. ^{[1
]}

Prakash, A. ^{[1
]}

Lee, H. Y. ^{[2
]}

Chen, W. S. ^{[2
]}

Chen, F. T. ^{[2
]}

Kao, M. -J. ^{[2
]}

Tsai, M. -J. ^{[2
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Thin Film Nano Tech Lab, Tao Yuan 333, Taiwan

[2] ITRI, EOL, Hsinchu, Taiwan

来源：

2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Promising resistive switching memory characteristics in a IrOx/GdOx/W structure have been investigated. The surface roughness of bottom electrode plays a major role for forming-free and low current resistive switching, due to electric field enhancement. Memory device shows repeatable switching cycles with a small compliance current of 20 mu A (60 mu W), long program/erase endurance of >10(4) cycles, and excellent data retention of >10(4) s at 85 degrees C.

引用

页数：2

共 37 条

[1] Formation-Polarity-Dependent Improved Resistive Switching Memory Performance Using IrOx/GdOx/WOx/W Structure
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JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)
[2] Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point
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JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)
[3] Forming-Free Resistive Switching Memory Characteristics Using IrOx/GdOx/W Cross-bar Structure
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Prakash, A.
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DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES, 2012, 45 (03): : 349 - 354
[4] Cross-Point Resistive Switching Memory and Urea Sensing by Using Annealed GdOx Film in IrOx/GdOx/W Structure for Biomedical Applications
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2017, 164 (04) : B127 - B135
[5] Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure
Prakash, Amit
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MICRO NANO DEVICES, STRUCTURE AND COMPUTING SYSTEMS, 2011, 159 : 333 - +
[6] Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure
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APPLIED PHYSICS LETTERS, 2016, 108 (01)
[7] Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories
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NANOSCALE RESEARCH LETTERS, 2014, 9 : 1 - 8
[8] Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories
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Nanoscale Research Letters, 9
[9] Impact of High-κ TaOx Thickness on the Switching Mechanism of Resistive Memory Device Using IrOx/TaOx/WOx/W Structure
Prakash, A.
Maikap, S.
Chen, W. S.
Lee, H. Y.
Chen, F. T.
Kao, M. -J.
Tsai, M. -J.
DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES, 2012, 45 (03): : 379 - 385
[10] Improved resistive switching memory performance using novel W/TaOx/TiOxN/TiN structure
Prakash, A.
Maikap, S.
Chen, W. S.
Lee, H. Y.
Chen, F. T.
Kao, M. -J.
Tsai, M. -J.
2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), 2013,

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