Rough surface improved formation-free low power resistive switching memory using IrOx/GdOx/W structure

被引：0

作者：

Jana, D. ^{[1
]}

Maikap, S. ^{[1
]}

Prakash, A. ^{[1
]}

Lee, H. Y. ^{[2
]}

Chen, W. S. ^{[2
]}

Chen, F. T. ^{[2
]}

Kao, M. -J. ^{[2
]}

Tsai, M. -J. ^{[2
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Thin Film Nano Tech Lab, Tao Yuan 333, Taiwan

[2] ITRI, EOL, Hsinchu, Taiwan

来源：

2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Promising resistive switching memory characteristics in a IrOx/GdOx/W structure have been investigated. The surface roughness of bottom electrode plays a major role for forming-free and low current resistive switching, due to electric field enhancement. Memory device shows repeatable switching cycles with a small compliance current of 20 mu A (60 mu W), long program/erase endurance of >10(4) cycles, and excellent data retention of >10(4) s at 85 degrees C.

引用

页数：2

共 37 条

[31] Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte
Rahaman, S. Z.
Maikap, S.
MICROELECTRONICS RELIABILITY, 2010, 50 (05) : 643 - 646
[32] Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure
Debanjan Jana
Somsubhra Chakrabarti
Sheikh Ziaur Rahaman
Siddheswar Maikap
Nanoscale Research Letters, 2015, 10
[33] Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure
Jana, Debanjan
Chakrabarti, Somsubhra
Rahaman, Sheikh Ziaur
Maikap, Siddheswar
NANOSCALE RESEARCH LETTERS, 2015, 10
[34] Low Power and Improved Switching Properties of Selector-Less Ta2O5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
Kim, Beomyong
Kim, Wangee
Kim, Hyojune
Jung, Kyooho
Park, Wooyoung
Seo, Bomin
Joo, Moonsig
Lee, Keejeung
Hong, Kwon
Park, Sungki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
[35] Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure
Cheng, Chun-Hu
Chou, K. I.
Zheng, Zhi-Wei
Hsu, Hsiao-Hsuan
CURRENT APPLIED PHYSICS, 2014, 14 (01) : 139 - 143
[36] Improved Performance of the Al2O3-Protected HfO2-TiO2 Base Layer with a Self-Assembled CH3NH3PbI3 Heterostructure for Extremely Low Operating Voltage and Stable Filament Formation in Nonvolatile Resistive Switching Memory
George, Twinkle
Murugan, Arumugam Vadivel
ACS APPLIED MATERIALS & INTERFACES, 2022, : 51066 - 51083
[37] Improved Performance of the Al2O3-Protected HfO2-TiO2Base Layer with a Self-Assembled CH3NH3PbI3Heterostructure for Extremely Low Operating Voltage and Stable Filament Formation in Nonvolatile Resistive Switching Memory
George, Twinkle
Murugan, Arumugam Vadivel
ACS Applied Materials and Interfaces, 2022, 14 (45): : 51066 - 51083

← 1 2 3 4 →