Rough surface improved formation-free low power resistive switching memory using IrOx/GdOx/W structure

被引：0
|
作者：
Jana, D. [1 ]
Maikap, S. [1 ]
Prakash, A. [1 ]
Lee, H. Y. [2 ]
Chen, W. S. [2 ]
Chen, F. T. [2 ]
Kao, M. -J. [2 ]
Tsai, M. -J. [2 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Thin Film Nano Tech Lab, Tao Yuan 333, Taiwan
[2] ITRI, EOL, Hsinchu, Taiwan
来源：
2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) | 2013年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Promising resistive switching memory characteristics in a IrOx/GdOx/W structure have been investigated. The surface roughness of bottom electrode plays a major role for forming-free and low current resistive switching, due to electric field enhancement. Memory device shows repeatable switching cycles with a small compliance current of 20 mu A (60 mu W), long program/erase endurance of >10(4) cycles, and excellent data retention of >10(4) s at 85 degrees C.
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