Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

被引：9
|
作者：
Liu, Li-Jung [1 ]
Chang-Liao, Kuei-Shu [1 ]
Jian, Yi-Chuen [1 ]
Cheng, Jen-Wei [1 ]
Wang, Tien-Ko [1 ]
Tsai, Ming-Jinn [2 ]
机构：
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan
[2] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 09期
关键词：
Atomic layer deposition (ALD); charge-trapping Flash memory; high-kappa; SiGe buried channel;
D O I：
10.1109/LED.2012.2206069
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The operation characteristics of p-channel TaN/Al2O3/HfO2/HfAlO2/SiO2/Si MAHOS-type nonvolatile memory devices with different Ge contents in a SiGe buried channel are investigated in this letter. Compared with those of a device having a conventional Si-channel, both programming and erasing speeds are significantly improved by employing a Si0.7Ge0.3 buried channel. Satisfactory retention and excellent endurance characteristics up to 10(6) P/E cycles with 4.1-V memory window show that the degradation on reliability properties, if it exists, is negligible when the SiGe buried channel is introduced.
引用
收藏
页码：1264 / 1266
页数：3
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