Method to evaluate Cable Discharge Event (CDE) reliability of integrated circuits in CMOS technology

被引：0
|
作者：
Lai, Tai-Xiang [1 ]
Ker, Ming-Dou [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Elect, Nanoelect & Gigascale Syst Lab, Hsinchu, Taiwan
来源：
ISQED 2006: PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN | 2006年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Cable Discharge Event (CDE) has been the main cause which damages the Ethernet interface in field applications. The transmission line pulsing (TLP) system has been the most popular method to observe electric characteristics of the device under human-body-model (HBM) electrostatic discharge (ESD) stress. In this work, the long-pulse transmission line pulsing (LP-TLP) system is proposed to simulate CDE reliability of the Ethernet integrated circuits, and the results are compared with the conventional 100-ns TLP system. The experimental results have shown that the CDE robustness of NMOS device in a 0.25-mu m CMOS technology is worse than its HBMESD robustness.
引用
收藏
页码：597 / +
页数：2
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