A divide-by-2 static frequency divider with AlGaAs/GaAs HBTs technology

被引：0
|
作者：
Li, XJ [1 ]
Zeng, QM [1 ]
Xu, XC [1 ]
Guo, JK [1 ]
Wang, QS [1 ]
Liu, WJ [1 ]
Liang, CG [1 ]
机构：
[1] Hebei Semicond Res Inst, State Key Lab ASIC, Shijiazhuang, Peoples R China
来源：
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A divide-by-2 Static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was described based on a master-slave D flip-flops. For a HBT with a 3.5 X 8um(2) emitter had a DC current gain of 30, The unity current gain cutoff frequency (F-c) and the maximum oscillation frequency (F-max) of the HBT's were extrapolated to about 40GHz. The IC was tested from DC to 8 GHz and demonstrated proper function under a supply voltage of -7Vto -8V.
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页码：1331 / 1333
页数：3
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