A DUAL-BAND DIVIDE-BY-2 INJECTION LOCKED FREQUENCY DIVIDER IN 0.35-μm SiGe BiCMOS

被引：8

作者：

Jang, Sheng-Lyang ^{[1
]}

Shih, Chih-Chieh ^{[1
]}

Chang, Chia-Wei ^{[1
]}

Liu, Cheng-Chen ^{[1
]}

Huang, Jhin-Fang ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2010年 / 52卷 / 12期

关键词：

0.35-mu m SiGe 3P3M BiCMOS; dual-band; 4th order resonator; divide-by-2 injection-locked frequency divider; LC VCO;

D O I：

10.1002/mop.25586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.35-mu m SiGe 3P3M BiCMOS process. The ILFD is realized with a cross-coupled HBT LC-tank oscillator with switched varactor bias for frequency band selection. The LC tank is a 4th order resonator audit can operate with two tunable frequency bands. Measurement results shots, that at the supply voltage of 1.25 V. the free-running frequency can be from 3.22 (6.76) to 3.41 (7.53) GHz for the low-(high-) frequency band. The divide-by-2 operational locking range can be from 6.3 (12.8) to 6.9.5 (15.3) GHz for the low-(high-) frequency band. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2762-2765, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25586

引用

页码：2762 / 2765

页数：4

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