Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation

被引：1
|
作者：
Ezhovskii, Yu. K. [1 ]
Mikhailovskii, S. V. [1 ]
机构：
[1] Tech Univ, St Petersburg State Technol Inst, St Petersburg 190013, Russia
来源：
RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A | 2018年 / 92卷 / 03期
关键词：
silicon-nitrogen nanolayers; molecular layer deposition method; silicon nitride nanostructures;
D O I：
10.1134/S003602441803007X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature range 473-773 K with discharge activation at the ammonia supply stage was studied. The conditions for growth of silicon nitride nanostructures and the layer mechanism of their formation were determined.
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页码：547 / 551
页数：5
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