Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation

被引：0
|
作者：
Yu. K. Ezhovskii
S. V. Mikhailovskii
机构：
[1] St. Petersburg State Technological Institute (Technical University),
来源：
Russian Journal of Physical Chemistry A | 2018年 / 92卷
关键词：
silicon-nitrogen nanolayers; molecular layer deposition method; silicon nitride nanostructures;
D O I：
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中图分类号：
学科分类号：
摘要：
The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature range 473–773 K with discharge activation at the ammonia supply stage was studied. The conditions for growth of silicon nitride nanostructures and the layer mechanism of their formation were determined.
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页码：547 / 551
页数：4
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