Molecular Layer Deposition of Silicon Nitride with Glow Discharge Activation

被引：1
|
作者：
Ezhovskii, Yu. K. [1 ]
Mikhailovskii, S. V. [1 ]
机构：
[1] Tech Univ, St Petersburg State Technol Inst, St Petersburg 190013, Russia
来源：
RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A | 2018年 / 92卷 / 03期
关键词：
silicon-nitrogen nanolayers; molecular layer deposition method; silicon nitride nanostructures;
D O I：
10.1134/S003602441803007X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The formation of silicon-nitrogen nanolayers obtained by molecular layer deposition on the GaAs surface with (100) and (110) orientations in the temperature range 473-773 K with discharge activation at the ammonia supply stage was studied. The conditions for growth of silicon nitride nanostructures and the layer mechanism of their formation were determined.
引用
收藏
页码：547 / 551
页数：5
相关论文
共 50 条
  • [21] Hydrogenated amorphous silicon films by 60 Hz glow-discharge deposition
    1600, (74):
  • [22] PROPERTIES OF SILICON NITRIDE DEPOSITED FROM A GASEOUS SOURCE BY RADIO FREQUENCY GLOW DISCHARGE
    SWANN, RCG
    MEHTA, RR
    CAUGE, TP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : C315 - &
  • [23] Amorphous silicon nitride films of different composition deposited at room temperature by pulsed glow discharge plasma immersion ion implantation and deposition
    Afanasyev-Charkin, IV
    Jacobsohn, LG
    Averitt, RD
    Nastasi, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (06): : 2342 - 2346
  • [24] Surface reaction mechanisms for atomic layer deposition of silicon nitride
    Mui, C
    Widjaja, Y
    Kang, JK
    Musgrave, CB
    SURFACE SCIENCE, 2004, 557 (1-3) : 159 - 170
  • [25] Surface reaction of silicon chlorides during atomic layer deposition of silicon nitride
    Yusup, Luchana L.
    Park, Jae-Min
    Mayangsari, Tirta R.
    Kwon, Young-Kyun
    Lee, Won-Jun
    APPLIED SURFACE SCIENCE, 2018, 432 : 127 - 131
  • [26] Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
    Ande, Chaitanya Krishna
    Knoops, Harm C. M.
    de Peuter, Koen
    van Drunen, Maarten
    Elliott, Simon D.
    Kessels, Wilhelmus M. M.
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2015, 6 (18): : 3610 - 3614
  • [27] Feature profile simulation of silicon nitride atomic layer deposition
    Moroz, Paul
    Moroz, Daniel J.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (06)
  • [28] Deposition of polysiloxane films in a glow discharge
    Abramov, VS
    Marusin, VV
    RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 2006, 79 (01) : 152 - 155
  • [29] Deposition of polysiloxane films in a glow discharge
    V. S. Abramov
    V. V. Marusin
    Russian Journal of Applied Chemistry, 2006, 79 : 152 - 155
  • [30] Deposition of polysiloxane films in a glow discharge
    Abramov, V.S.
    Marusin, V.V.
    Russian Journal of Applied Chemistry, 2006, 79 (01): : 152 - 155
12345