Radiation hardened memories for space applications

被引:3
|
作者
Haddad, NF [1 ]
Brown, RD [1 ]
Doyle, S [1 ]
Wright, SJ [1 ]
机构
[1] BAE SYST, Manassas, VA 20110 USA
关键词
D O I
10.1109/AERO.2001.931187
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
Several generations of radiation hardened memory products were developed to support space applications. Both process technology enhancements and specialized design techniques were used to overcome the weaknesses of commercial memories when used in the space environment. The natural advancement of semiconductor technology was used to progressively increase density, enhance performance, and reduce power consumption. Historically, radiation hardened memories for space were fabricated at specialized foundries to achieve strategic levels of radiation hardness for both natural space and military applications. The demand for higher densities and lower cost, however, are pushing for design compatibility with state-of-the-art commercial foundries for 4M SRAM and beyond, and creating a new set of products targeting natural space. Advanced packaging technology is used to improve bit density and reduce weight, both of which are critical for space missions.
引用
收藏
页码:2281 / 2288
页数:8
相关论文
共 50 条
  • [31] Radiation hardened 150nm standard cell ASIC design library for space applications
    Rockett, Leonard R.
    Kouba, Daniel J.
    2008 IEEE AEROSPACE CONFERENCE, VOLS 1-9, 2008, : 2258 - 2265
  • [32] Radiation-hardened 14T SRAM cell by polar design for space applications
    Hao, Licai
    Qiang, Bin
    Dai, Chenghu
    Peng, Chunyu
    Lu, Wenjuan
    Lin, Zhiting
    Liu, Li
    Zhao, Qiang
    Wu, Xiulong
    Sun, Fei
    IEICE ELECTRONICS EXPRESS, 2022, 20 (13):
  • [33] A 10-bit Radiation-Hardened by Design (RHBD) SAR ADC for Space Applications
    Baghbanmanesh, MohammadReza
    Maloberti, Franco
    Gatti, Umberto
    2017 FIRST NEW GENERATION OF CAS (NGCAS), 2017, : 53 - 56
  • [34] Development of a Radiation-Hardened 0.18 μm CMOS Standard Cell Library for Space Applications
    Liu, Jia
    Yang, Weidong
    Zhang, RuiTao
    Feng, XiaoGang
    Wang, Yuxin
    Chen, Guangbing
    Li, Ruzhang
    Li, Yao
    Yang, Jing
    Fu, Dongbing
    2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
  • [35] High performance radiation hardened static random access memory (SRAM) design for space applications
    Doyle, S
    Ramaswamy, S
    Hoang, T
    Rockett, L
    Grembowski, T
    Bumgarner, A
    2004 IEEE AEROSPACE CONFERENCE PROCEEDINGS, VOLS 1-6, 2004, : 2284 - 2293
  • [36] Radiation hardened 12T SRAM cell with improved writing capability for space applications
    Sharma, Rishabh
    Mondal, Debabrata
    Shah, Ambika Prasad
    Memories - Materials, Devices, Circuits and Systems, 2023, 5
  • [37] A radiation-hardened low-dropout voltage regulator for LHC and space applications.
    Bonna, G
    Imbruglia, A
    Duperray, H
    Jarron, P
    Faccio, F
    Bigga, A
    Glaser, M
    Roberts, B
    PROCEEDINGS OF THE FIFTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS, 1999, : 208 - 213
  • [38] Radiation-hardened 14T SRAM cell by polar design for space applications
    Hao, Licai
    Qiang, Bin
    Dai, Chenghu
    Peng, Chunyu
    Lu, Wenjuan
    Lin, Zhiting
    Liu, Li
    Zhao, Qiang
    Wu, Xiulong
    Sun, Fei
    IEICE ELECTRONICS EXPRESS, 2023, 20 (13): : 1 - 6
  • [39] Highly Stable Low Power Radiation Hardened Memory-by-Design SRAM for Space Applications
    Pal, Soumitra
    Sri, Dodla Divya
    Ki, Wing-Hung
    Islam, Aminul
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 68 (06) : 2147 - 2151
  • [40] Adaptable ferroelectric memories for space applications
    Kamp, DA
    DeVilbiss, AD
    Philpy, SC
    Derbenwick, GF
    2004 NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, PROCEEDINGS, 2004, : 149 - 152