High Voltage SiC Schottky Diodes in Rectifiers for X-ray Generators

被引：2
|
作者：
Luerkens, P. [1 ]
Guimaraes, P. [1 ]
Godignon, P. [2 ]
Millan, J. [2 ]
机构：
[1] Philips Innovat Technol Res, Weisshausstr 2, D-5066 Aachen, Germany
[2] CNM, CSIC, Cerdanyola Del Valles 08193, Spain
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
Silicon-Carbide; Schottky-diode; Voltage Multiplier; Cascade Rectifier; Behavioral Model; X-ray generator;
D O I：
10.4028/www.scientific.net/MSF.717-720.1245
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon-Carbide-based semiconductors offer realization of efficient high voltage components, with high switching speed and low conduction losses [1]. SiC Schottky diodes with safe blocking capability of at least 4 kV were produced and characterized. A simulation model for loss determination was developed. Real losses were determined on a small scale test setup and chip temperature distribution was obtained from that, combined with FEM calculation. A full-size rectifier 100 kW/140 kV-SiC-rectifier module with six times higher power density than with conventional Si-technology was realized.
引用
收藏
页码：1245 / +
页数：2
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